Chinese Journal of Catalysis ›› 2013, Vol. 34 ›› Issue (9): 1745-1755.DOI: 10.1016/S1872-2067(12)60639-1

• Research papers • Previous Articles     Next Articles

Effects of the oxidation extent of the SiC surface on the performance of Ni/SiC methanation catalysts

Guoquan Zhanga,b, Jiaxi Penga, Tianjun Suna, Shudong Wanga   

  1. a Dalian National Laboratory for Clean Energy, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, Liaoning, China;
    b University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2013-05-19 Revised:2013-06-24 Online:2013-09-16 Published:2013-08-28
  • Supported by:

    This work was supported by the National High Technology Research and Development Program of China (863 Program, 2009AA050901) and the National Natural Science Foundation of China (21276250).

Abstract:

Ni/SiC methanation catalysts were prepared by an incipient wetness impregnation method. Effects of the oxidation extent of the SiC surface on low-temperature activity and high-temperature stability of the catalysts were investigated. Samples were characterized by thermogravimetry and differential scanning calorimetry, N2 adsorption-desorption, Fourier transform infrared spectra, temperature-programmed desorption of NH3, X-ray diffraction, temperature-programmed reduction of H2 and H2 chemisorption. The surface area and nickel dispersion of the catalysts decreased with increasing oxidation temperature of the SiC supports, while both reducibility and stability of the catalysts increased. The Ni/SiC catalyst with the unoxidized SiC support showed the poorest high-temperature stability probably because of the weak anchorage of Ni particles to the support. The Ni/SiC samples prepared on the SiC supports oxidized at 500 and 700℃ had better low-temperature activity and high-temperature stability, which was because Ni particles were well dispersed on and strongly anchored to these properly oxidized supports. The Ni/SiC catalyst with the SiC support oxidized at 900℃ showed the worst low-temperature activity because of the larger Ni particles caused by the less active oxide layer due to the overoxidation of the support.

Key words: Methanation, Silicon carbide, Surface oxidation, Nickel, High-temperature stability