In situ fabrication of Bi2Se3/g-C3N4 S-scheme photocatalyst with improved photocatalytic activity

doi:10.1016/S1872-2067(21)63911-6

Abstract

Abstract:

Bismuth selenide (Bi₂Se₃) is an attractive visible-light-responsive semiconductor that can absorb a full range of visible and near-infrared light. However, its poor redox capacity and rapid carrier recombination limit its application in photocatalytic oxidation. In this study, we adopted Bi₂Se₃ as the couple part of graphitic carbon nitride (g-C₃N₄) to construct a Bi₂Se₃/g-C₃N₄ composite photocatalyst. Through in situ fabrication, the self-developed Bi₂O₃/g-C₃N₄ precursor was transformed into a Bi₂Se₃/g-C₃N₄ heterojunction. The as-prepared Bi₂Se₃/g-C₃N₄ composite exhibited much higher visible-light-driven photocatalytic activity than pristine Bi₂Se₃ and g-C₃N₄ in the removal of phenol. The enhanced photocatalytic activity was ascribed to the S-scheme configuration of Bi₂Se₃/g-C₃N₄; this was confirmed by the energy-level shift, photoluminescence analysis, computational structure study, and reactive-radical testing. In the S-scheme heterojunction, photo-excited electrons in the conduction band of g-C₃N₄ migrate to the valence band of Bi₂Se₃ and combine with the excited holes therein. By consuming less reactive carriers, the S-scheme heterojunction can not only effectively promote charge separation, but also preserve more reactive photo-generated carriers. This property enhances the photocatalytic activity.

Key words: S-scheme heterojunction, Bismuth selenide, Graphitic carbon nitride, In situ fabrication, Photocatalysis

Rongan He, Sijiao Ou, Yexuan Liu, Yu Liu, Difa Xu. In situ fabrication of Bi₂Se₃/g-C₃N₄ S-scheme photocatalyst with improved photocatalytic activity[J]. Chinese Journal of Catalysis, 2022, 43(2): 370-378.

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URL: https://www.cjcatal.com/EN/10.1016/S1872-2067(21)63911-6

https://www.cjcatal.com/EN/Y2022/V43/I2/370

Figures/Tables 12

Fig. 1. XRD patterns of Bi2Se3, g-C3N4, and Bi2Se3/g-C3N4 composite.

Fig. 2. TEM (a) and HRTEM (b,c) morphologies of Bi2Se3/g-C3N4 composite.

Fig. 3. N2 adsorption-desorption isotherms (a) and pore-size distributions (b) of Bi2Se3, g-C3N4, and Bi2Se3/g-C3N4.

Fig. 4. DRS spectra of Bi2Se3, g-C3N4, and Bi2Se3/g-C3N4 composite.

Fig. 5. PL spectra (a) and EIS spectra (b) of Bi2Se3, g-C3N4, and Bi2Se3/g-C3N4 under excitation light of 360 nm.

Fig. 6. XPS-survey spectra (a) and high-resolution XPS spectra (b-d) of samples.

Fig. 7. Band structure of Bi2Se3.

Fig. 8. CPDs (a) and the corresponding Fermi levels (b) of Bi2Se3, g-C3N4, and Bi2Se3/g-C3N4.

Fig. 9. VB-XPS spectra of pure Bi2Se3 and g-C3N4.

Fig. 10. (a) Photocatalytic degradation of phenol over Bi2Se3, g-C3N4, and Bi2Se3/g-C3N4; (b) Temporal UV spectra of phenol over Bi2Se3/g-C3N4; (c) The kinetic curves of samples; (d) Stability test result of Bi2Se3/g-C3N4 with irradiation time of 2 h.

Fig. 11. DMPO-•O2- (a) and DMPO-•OH (b) test results of samples under a Xe lamp.

Fig. 12. Photocatalytic mechanism of Bi2Se3/g-C3N4.

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In situ fabrication of Bi₂Se₃/g-C₃N₄ S-scheme photocatalyst with improved photocatalytic activity

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