S-scheme heterojunction with intraband defect levels for artificial photosynthesis

doi:10.1016/S1872-2067(24)60223-8

Chinese Journal of Catalysis ›› 2025, Vol. 70: 5-7.DOI: 10.1016/S1872-2067(24)60223-8

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S-scheme heterojunction with intraband defect levels for artificial photosynthesis

Xiaoming Liu^a^,^*(), Zhifeng Jiang^b^,^*()

^aDepartment of Resources and Environment, Moutai Institute, Renhuai 564507, Guizhou, China
^bInstitute for Energy Research, School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang, Jiangsu 212013, China

Received:2025-01-11 Accepted:2025-01-18 Online:2025-03-18 Published:2025-03-20
Contact: * Xiaoming Liu,E-mail: xmliu@soil.gd.cn (X. Liu);Zhifeng Jiang,E-mail: jiangzf@ujs.edu.cn(Z. Jiang)

Abstract

Xiaoming Liu, Zhifeng Jiang. S-scheme heterojunction with intraband defect levels for artificial photosynthesis[J]. Chinese Journal of Catalysis, 2025, 70: 5-7.

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Fig. 2. (a) Schematic diagram for the preparation of WO3-x/In2S3 heterostructures. (b) FESEM image of WO3-x/In2S3 hybrid nanofibers. (c) UV-vis diffuse reflectance spectra of WO3-x/In2S3 nanohybrids. (d) EPR spectra of WO3-x/In2S3 nanohybrids. (e) High resolution XPS spectra of W 4f in WO3-x-T and WO3-x/In2S3-T nanohybrids. (f) Calculated electrostatic potentials of WO3-x (001) slabs with moderate concentration of OVs (intermediate defect level), and the corresponding charge density difference of WO3-x/In2S3 heterojunctions (insets), cyan and violet regions represent electron accumulation and depletion, respectively. Normalized GSB recovery kinetics recorded at around 640 nm within 100 ps in the VIS region: WO3-x-T (g) and WO3-x/In2S3-T (h). The inset image is the corresponding GSB kinetics at extended delay time. (i) Schematic illustrations of the charge transfer mechanism within WO3-x/In2S3 S-scheme heterojunctions in VIS region. (j) Photocatalytic CO2 reduction activities over WO3-x/In2S3 samples during a six-hour experiment under UV-visible light irradiation. Copyright 2024, Wiley.

S-scheme heterojunction with intraband defect levels for artificial photosynthesis

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