催化学报 ›› 2027, Vol. 92: 387-396.DOI: 10.1016/S1872-2067(26)65197-2

• 论文 • 上一篇    下一篇

氧空位驱动的PdOₓ催化剂上甲烷燃烧机理转变

陈艳艳a, 王森a, 朱善辉a, 王鹤a, 董梅a,*(), 秦张峰a, 王建国a,b, 樊卫斌a,*()   

  1. a 中国科学院山西煤炭化学研究所, 煤炭高效低碳利用全国重点实验室, 山西太原 030001
    b 中国科学院大学, 北京 100049
  • 收稿日期:2026-02-04 接受日期:2026-04-01 出版日期:2027-01-02 发布日期:2026-10-30
  • 通讯作者: *电子信箱: fanwb@sxicc.ac.cn (樊卫斌),
    mdong@sxicc.ac.cn (董梅).
  • 基金资助:
    国家重点研发计划(2023YFB4103100);国家自然科学基金(22472191);山西省自然科学基金(202203021211001);山西省自然科学基金(202403011241008)

Mechanistic switch in methane combustion on PdOₓ catalysts mediated by oxygen vacancies

Yanyan Chena, Sen Wanga, Shanhui Zhua, He Wanga, Mei Donga,*(), Zhangfeng Qina, Jianguo Wanga,b, Weibin Fana,*()   

  1. a State Key Laboratory of Coal Conversion, Institute of Coal Chemistry, Chinese Academy of Sciences, Taiyuan 030001, Shanxi, China
    b University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2026-02-04 Accepted:2026-04-01 Online:2027-01-02 Published:2026-10-30
  • Contact: *E-mail: fanwb@sxicc.ac.cn (W. Fan),
    mdong@sxicc.ac.cn (M. Dong).
  • Supported by:
    National Key R&D Program of China(2023YFB4103100);National Natural Science Foundation of China(22472191);Natural Science Foundation of Shanxi Province of China(202203021211001);Natural Science Foundation of Shanxi Province of China(202403011241008)

摘要:

甲烷作为天然气的主要成分, 是一种高效清洁的燃料, 但其不完全燃烧不仅会降低燃料的利用效率, 还会加剧温室效应. 催化燃烧是解决这一问题的关键技术, 其中PdOₓ催化剂因其优异的催化活性受到广泛关注. 大量研究表明, 催化剂活性与氧空位密切相关, 但是氧空位在反应条件下如何调控反应路径, 目前仍然缺乏分子层面的理解. 为此, 本文结合密度泛函理论(DFT)、从头算分子动力学(AIMD)和微动力学模拟, 揭示了氧空位介导的活性位点演化规律及反应机理, 为理性设计高效Pd基催化剂提供了理论依据.

本文系统研究了甲烷在完美PdO表面和含氧空位PdOᵥ表面的燃烧反应机理; 提出并构建了“双位点对” (常规位点对Pd3f-O3f与缺陷位点对Pdov-Ov)微动力学模型, 并定量了这两类活性位点的贡献. AIMD模拟揭示了Pd(100)表面的氧化机制: 表面先形成PdO(100)薄膜, 随后部分表面氧原子迁移到次表面, 形成PdO(101)特征构型, 证实PdO(100)与PdO(101)两种晶面可以共存. DFT计算表明, 氧空位邻近的Pd原子(Pdₒᵥ)是活化C-H键的活性中心: 在PdOᵥ(101)和PdOᵥ(100)表面上, 甲烷解离为CH3*的能垒分别为47和53 kJ/mol, 远低于对应完美表面上的66和121 kJ/mol. 电子结构分析表明, Pdₒᵥ的d带中心显著偏移并靠近费米能级, 形成类Pdₒᵥ-C共价键, 导致Pdₒᵥ活性增强. 进一步机理研究表明: 在完美的PdO(101)表面上, 甲烷发生氧助解离, 反应以CHₓO路径为主, 遵循Langmuir-Hinshelwood (LH)机理; 而在含氧空位的PdOᵥ(101)和PdOᵥ(100)表面上, 甲烷以CHₓ逐步解离路径为主, 整体遵循Mars-van Krevelen (MvK)机制, 由Pdₒᵥ与邻近的晶格氧协同催化, 揭示了氧空位的活化本质. 微动力学模拟结果显示, Pdₒᵥ位点的转化频率相比完美表面Pd3f位点提升5-70倍, 提升幅度与反应温度密切相关, 呈火山型变化. 低温时由于生成的Pdₒᵥ位点少, LH机理起主导作用; 高温时生成的Pdₒᵥ位点数量增加, MvK机理贡献增强, 这很好地解释了反应表观活化能由低温段的80-125 kJ/mol降至高温段的24-45 kJ/mol这一实验现象.

综上, 本研究证实氧空位诱导生成的Pdₒᵥ位点为关键活性中心, 揭示了Pdₒᵥ与相邻晶格氧的协同催化作用机制, 建立了“双位点对”微动力学模型, 定量了完美PdO位点与其缺陷位点的催化活性贡献, 表明通过调控氧空位及其配位环境可以有效优化PdOₓ的催化燃烧性能.

关键词: 甲烷氧化, Pd基催化剂, 氧空位, 密度泛函理论, 微动力学模拟

Abstract:

The superior activity of PdOx catalysts for methane combustion is intimately linked to oxygen vacancies. However, a molecular-level understanding of how these defects govern the reaction under working conditions remains elusive. Here, we develop a novel “two site-pairs” microkinetic strategy integrated with density functional theory (DFT) and ab initio molecular dynamics (AIMD) simulations to unravel their role. AIMD simulations reveal the structural evolution from Pd(100) to a PdO(100) film and finally to the PdO(101) facet. DFT calculations identify Pd atoms adjacent to oxygen vacancies (Pdₒᵥ) as the primary active centers for facile CH4 C-H bond cleavage on both PdOᵥ(101) and PdOᵥ(100) surfaces, while neighboring lattice oxygen atoms promote subsequent oxidation. This cooperative dual-site mechanism is central to the Mars-van Krevelen (MvK) pathway. Crucially, microkinetic modeling captures a temperature-driven switch in the dominant reaction mechanism: from the Langmuir-Hinshelwood mechanism prevalent on pristine PdO(101) to the Pdₒᵥ-mediated MvK mechanism that dominates on oxygen-deficient surfaces. The high activity of Pdov sites originates from their accessible frontier orbitals and the formation of covalent Pdov-C bonds in the transition states. Collectively, our work establishes a defect-mediated catalytic cycle, providing a fundamental basis for designing high-performance catalysts via oxygen vacancy engineering.

Key words: Methane oxidation, Pd-based catalysts, Oxygen vacancies, Density functional theory, Microkinetic modeling