Chinese Journal of Catalysis ›› 2012, Vol. 33 ›› Issue (10): 1712-1716.DOI: 10.3724/SP.J.1088.2012.20640

• Research papers • Previous Articles     Next Articles

Growth and Interfacial Interaction of Cu on ZrO2(111) Thin Film

HOU Jianbo, HAN Yong, PAN Yonghe, XU Qian, PAN Haibin, ZHU Junfa*   

  1. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, Anhui, China
  • Received:2012-06-20 Revised:2012-07-25 Online:2012-09-28 Published:2012-09-28

Abstract: The growth mode and interfacial interaction of Cu nanoparticles on the ordered ZrO2(111) thin film surfaces have been studied by low energy electron diffraction, synchrotron radiation photoemission spectroscopy, and X-ray photoelectron spectroscopy. The ZrO2(111) thin film was grown on Pt(111) using the molecular beam epitaxy technique. At room temperature, copper initially grows two-dimensionally on the ZrO2(111) thin film up to 0.15 monolayer (ML), followed by three-dimensional islanding. The binding energy of Cu 2p3/2 increases with decreasing the Cu coverage, owing to the contribution from both the initial-state and final-state effects. The interaction between Cu and ZrO2 leads to the charge transfer from Cu to the ZrO2 substrate, which causes the appearance of Cu(I) state. Above 1 ML, Cu becomes metallic state on ZrO2.

Key words: copper, zirconia, low energy electron diffraction, X-ray photoelectron spectroscopy, synchrotron radiation photoemission spectroscopy, interfacial interaction, initial-state effect, final-state screening