Chinese Journal of Catalysis ›› 2026, Vol. 83: 172-182.DOI: 10.1016/S1872-2067(25)64895-9

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Tuning surface electronic structure of (CuGa)xZn1‒2xGa2S4 photocatalyst for efficient nitrate-to-ammonia conversion

Peng Liua, Lian Duana, Baopeng Yangb, Mingwei Suna, Gen Chena, Xiaohe Liuc, Min Liub,*(), Ning Zhanga,*()   

  1. aSchool of Materials Science and Engineering, Central South University, Changsha 410083, Hunan, China
    bSchool of Physics, Central South University, Changsha 410083, Hunan, China
    cSchool of Chemical Engineering, Zhengzhou University, Zhengzhou 450001, Henan, China
  • Received:2025-08-02 Accepted:2025-08-31 Online:2026-04-05 Published:2026-03-04
  • Contact: Min Liu, Ning Zhang
  • Supported by:
    National Natural Science Foundation of China(22072183);National Natural Science Foundation of China(22376222);Natural Science Foundation of Hunan Province, China(2022JJ30690);Science and Technology lnnovation Program of Hunan Province(2023RC1012);Central South University Research Program of Advanced Interdisciplinary Studies(2023QYJC012)

Abstract:

The photocatalytic conversion of nitrate (NO3-) into ammonia (NH4+) under mild conditions offers a promising approach for mitigating environmental nitrate contamination. The efficiency of this process is fundamentally governed by the adsorption and activation of NO3- and its intermediates, which are significantly influenced by the surface electronic properties of the catalyst, particularly the position of the d-band center. However, conventional approaches to tune the surface electronic structure such as doping with extraneous elements or forming heterojunctions often alter the overall band structure seriously, typically leading to reduced photocatalytic activity. In this study, the d-band state of (CuGa)xZn1‒2xGa2S4 semiconductor is engineered through Al3+ surface decoration without affecting the conduction band or the bandgap to enhance NO3- adsorption and activation. X-ray photoelectron spectroscopy and X-ray absorption fine structure analyses reveal that the surface doping of Al3+ do not induce obviously energy band structure change but the d-band center, which shift more closer to Fermi level in comparison with pristine material. Electronic energy band analyses indicate that Al3+ decoration does not significantly alter the conduction band or bandgap. Moreover, the Al3+-modified material demonstrates a substantial improvement in photocatalytic conversion of NO3- into NH4+, increasing the NH4+ production rate from 0.18 to 0.93 mmol h-1 g-1. Density functional theory calculations further revealed that the d-band center of Al3+/(CuGa)xZn1-2xGa2S4 shifted closer to the Fermi level, moving from -4.75 to -4.54 eV compared to the pristine (CuGa)xZn1-2xGa2S4. This shift lowered the Gibbs free energy for the adsorption of NO3- reduction intermediates, thereby enhancing the conversion efficiency of NO3- into NH4+. This work introduces an effective strategy for surface d-band states modulation without altering the intrinsic band structure to improve nitrate reduction performance, offering deep insights into the future design of materials for environmental remediation applications.

Key words: Photocatalysis, Electronic structure, d-band center, Sulfide, Nitrate reduction