Chinese Journal of Catalysis ›› 2019, Vol. 40 ›› Issue (2): 204-213.DOI: 10.1016/S1872-2067(18)63171-7

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Interface-controlled synthesis of CeO2(111) and CeO2(100) and their structural transition on Pt(111)

Yi Zhanga,c, Wei Fengb, Fan Yanga, Xinhe Baoa   

  1. a State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, Liaoning, China;
    b Science and Technology on Surface Physics and Chemistry Laboratory, Jiangyou 621908, Sichuan, China;
    c University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2018-08-12 Revised:2018-09-18 Online:2019-02-28 Published:2019-01-11
  • Contact: 10.1016/S1872-2067(18)63171-7
  • Supported by:

    This work was supported by the National Key R&D Program of China (2017YFB0602205, 2016YFA0202803, 2017YFA0303104), the Strategic Priority Research Program of the Chinese Academy of Sciences (XDB17020200), and the National Natural Science Foundation of China (21473191, 91545204).

Abstract:

Ceria-based catalytic materials are known for their crystal-face-dependent catalytic properties. To obtain a molecular-level understanding of their surface chemistry, controlled synthesis of ceria with well-defined surface structures is required. We have thus studied the growth of CeOx nanostructures (NSs) and thin films on Pt(111). The strong metal-oxide interaction has often been invoked to explain catalytic processes over the Pt/CeOx catalysts. However, the Pt-CeOx interaction has not been understood at the atomic level. We show here that the interfacial interaction between Pt and ceria could indeed affect the surface structures of ceria, which could subsequently determine their catalytic chemistry. While ceria on Pt(111) typically exposes the CeO2(111) surface, we found that the structures of ceria layers with a thickness of three layers or less are highly dynamic and dependent on the annealing temperatures, owing to the electronic interaction between Pt and CeOx. A two-step kinetically limited growth procedure was used to prepare the ceria film that fully covers the Pt(111) substrate. For a ceria film of~3-4 monolayer (ML) thickness on Pt(111), annealing in ultrahigh vacuum (UHV) at 1000 K results in a surface of CeO2 (100), stabilized by a c-Ce2O3(100) buffer layer. Further oxidation at 900 K transforms the surface of the CeO2(100) thin film into a hexagonal CeO2(111) surface.

Key words: Interfacial interaction, Pt/CeOx catalyst, CeO2(111), CeO2(100), c-Ce2O3(100)