通过可控硫空位工程调控CdS中的载流子动力学: 飞秒瞬态吸收光谱的见解

doi:10.1016/S1872-2067(26)65278-3

催化学报 ›› 2027, Vol. 92: 274-284.DOI: 10.1016/S1872-2067(26)65278-3

通过可控硫空位工程调控CdS中的载流子动力学: 飞秒瞬态吸收光谱的见解

孟政^a, 艾陈斌^a, 张建军^a, 何博文^a, 张留洋^a^,^*(), 吴珍^b^,^*(), 余家国^a^,^*()

^a 中国地质大学(武汉)材料与化学学院太阳燃料实验室, 湖北武汉 430078, 中国
^b 鄂尔多斯应用技术学院化学工程学院, 内蒙古鄂尔多斯 017000, 中国
^c 白俄罗斯国家科学院热质传递研究所, 明斯克, 白俄罗斯
^d 俄罗斯科学院西伯利亚分院博列斯科夫催化研究所非常规催化过程系, 新西伯利亚, 俄罗斯
^e 伊朗德黑兰大学理学院化学系, 德黑兰, 伊朗

收稿日期:2026-05-09 接受日期:2026-06-25 出版日期:2027-01-02 发布日期:2026-10-30
通讯作者: *zhangliuyang@cug.edu.cn (张留洋),
wuzhen@oit.edu.cn (吴珍),
selishev@catalysis.ru (D. Selishchev),
jahan.ghasemi@ut.ac.ir (J. B. Ghasemi),
yujiaguo93@cug.edu.cn (余家国).
基金资助:
国家自然科学基金(52322214);国家自然科学基金(22278383);国家自然科学基金(22409181);国家自然科学基金(22469001);国家自然科学基金(22361132529);湖北省自然科学基金(2023AFA088)

Regulating carrier dynamics in CdS via controlled sulfur vacancy engineering: Insights from femtosecond transient absorption spectroscopy

Zheng Meng^a, Chenbin Ai^a, Jianjun Zhang^a, Bowen He^a, Liuyang Zhang^a^,^*(), Zhen Wu^b^,^*(), Serguei Filatov^c, Dmitry Selishchev^d^,^*(), Jahan B. Ghasemi^e^,^*(), Jiaguo Yu^a^,^*()

^a Laboratory of Solar Fuel, Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430078, Hubei, China
^b Department of Chemical Engineering, Ordos Institute of Technology, Ordos 017000, Inner Mongolia, China
^c Heat and Mass Transfer Institute, National Academy of Sciences of Belarus, P. Brovka, 15, ITMO, Minsk 220072, Belarus
^d Department of Unconventional Catalytic Processes, Boreskov Institute of Catalysis SB RAS, Lavrentieva Ave. 5, Novosibirsk 630090, Russia
^e Faculty of Chemistry, School of Sciences, University of Tehran, Tehran 1417614335, Iran

Received:2026-05-09 Accepted:2026-06-25 Online:2027-01-02 Published:2026-10-30
Contact: *E-mail: zhangliuyang@cug.edu.cn (L. Zhang),
wuzhen@oit.edu.cn (Z. Wu),
selishev@catalysis.ru (D. Selishchev),
jahan.ghasemi@ut.ac.ir (J. B. Ghasemi),
yujiaguo93@cug.edu.cn (J. Yu).
Supported by:
National Natural Science Foundation of China(52322214);National Natural Science Foundation of China(22278383);National Natural Science Foundation of China(22409181);National Natural Science Foundation of China(22469001);National Natural Science Foundation of China(22361132529);National Science Foundation of Hubei Province(2023AFA088)

摘要/Abstract

摘要：

光生电子与空穴的严重复合是限制CdS光催化效率的主要瓶颈. 在CdS中引入硫空位(S_v)可调控局域电子结构并影响载流子行为, 但S_v浓度与光生电子捕获、复合及表面反应动力学之间的定量关系尚不明确, 尤其是从超快时间尺度到稳态表面电荷分布的系统研究仍很匮乏. 本文旨在通过精确调控S_v浓度, 揭示其在不同环境(惰性介质与水溶液)中对CdS载流子动力学的双重作用机制, 为缺陷工程优化提供动力学依据.

采用不同温度(300, 500, 700 °C)热处理并结合NaOH刻蚀去除SiO₂模板, 构筑了一系列具有梯度S_v浓度的CdS空心球光催化剂(标记为CdS-300, CdS-500和CdS-700), 并以未煅烧样品(CdS-0)作为对照. 电子顺磁共振(EPR)和X射线光电子能谱等表征证实了S_v的形成, 并表明S_v浓度随热处理温度升高呈先增后减的火山型变化趋势. 紫外-可见(UV-vis)漫反射光谱显示, S_v的引入增强了样品的光吸收能力, 导致了吸收边的红移. 稳态光致发光光谱结果表明, 引入S_v后整体发光强度降低, 证实S_v可作为有效的电子捕获位点, 从而抑制光生载流子的复合. 进一步结合飞秒瞬态吸收光谱和开尔文探针力显微镜等手段, 系统研究了S_v浓度对光生电子捕获、复合及表面电荷分布的影响. 结果表明, 适量S_v (CdS‑300样品)引入浅电子陷阱态, 在乙腈中将光生电子平均寿命延长至1112.0 ps, 同时表面光电压降至77 mV, 表明电子在表面活性位点高效积累; 过量S_v则转变为复合中心, 从而加速载流子衰减. 在水溶液中, CdS‑300的电子寿命为1062.9 ps, 低于CdS‑0的寿命(1077.8 ps), 证实S_v不仅捕获电子, 还作为活性位点直接参与界面还原反应. 除此之外, 加入电子牺牲剂(K₂Cr₂O₇)后CdS-0寿命急剧降低, 而空穴牺牲剂(乳酸)的加入未明显改变其寿命, 这进一步证实了CdS中fs-TA光谱信号是由电子主导.

综上, S_v具有浓度依赖的双重作用: 低浓度时促进电荷分离, 高浓度时演变为复合中心; S_v不仅捕获电子, 还作为活性位点参与界面还原反应. 该工作建立了CdS中结构缺陷与载流子动力学的关联, 为理性设计高效硫化物光催化剂提供了理论指导.

关键词: CdS, 硫空位, 飞秒瞬态吸收光谱, 载流子动力学, 表面光电压

Abstract:

Severe electron-hole recombination remains a fundamental bottleneck limiting the efficiency of semiconductor photocatalysts. Engineering defect states, particularly sulfur vacancies (S_v), offers an effective strategy to tailor local electronic structures and regulate charge carrier dynamics. Herein, CdS hollow spheres with tunable S_v concentrations were constructed through thermal treatment, yielding a non-monotonic (volcano-type) dependence of defect density. Ultrafast femtosecond transient absorption spectroscopy reveals that a moderate S_v concentration introduces shallow electron-trapping states, thereby prolonging the lifetime of photogenerated electrons (up to 1112.0 ps in acetonitrile) and suppressing recombination. In contrast, excessive S_v accumulation generates recombination centers, resulting in accelerated carrier decay. Kelvin probe force microscopy further demonstrates that the optimally engineered sample exhibits the lowest surface photovoltage (77 mV), indicative of efficient electron accumulation at surface active sites. More importantly, this work identifies a concentration-dependent dual role of sulfur vacancies—evolving from charge-separation promoters to recombination centers—and elucidates the interplay between defect-mediated carrier trapping and surface reaction kinetics in aqueous environments. These findings establish a refined mechanistic framework for defect engineering and provide strategic guidance for the rational design of high-performance CdS-based photocatalysts.

Key words: CdS, Sulfur vacancy, Femtosecond transient absorption spectroscopy, Carrier dynamics, Surface photovoltage

孟政, 艾陈斌, 张建军, 何博文, 张留洋, 吴珍, 余家国. 通过可控硫空位工程调控CdS中的载流子动力学: 飞秒瞬态吸收光谱的见解[J]. 催化学报, 2027, 92: 274-284.

Zheng Meng, Chenbin Ai, Jianjun Zhang, Bowen He, Liuyang Zhang, Zhen Wu, Serguei Filatov, Dmitry Selishchev, Jahan B. Ghasemi, Jiaguo Yu. Regulating carrier dynamics in CdS via controlled sulfur vacancy engineering: Insights from femtosecond transient absorption spectroscopy[J]. Chinese Journal of Catalysis, 2027, 92: 274-284.

×
扫码分享

导出引用管理器 EndNote|Ris|BibTeX

链接本文: https://www.cjcatal.com/CN/10.1016/S1872-2067(26)65278-3

https://www.cjcatal.com/CN/Y2027/V92/I1/274

图/表 8

Fig. 1. (a) XRD patterns of CdS-0, CdS-300, CdS-500, and CdS-700. TEM image (b) and HRTEM image (c) of CdS-300. (d) FESEM image of CdS-300. EDS elemental mapping of Cd (e) and S (f) in CdS-300.

Fig. 2. EPR spectra (a), high-resolution Cd 3d XPS spectra (b), high-resolution S 2p XPS spectra (c), UV-vis diffuse reflectance spectra (d), Kubelka-Munk function transformed band gap plots (e), and PL spectra (f) of CdS-0, CdS-300, CdS-500, and CdS-700.

Fig. 3. fs-TA pseudo-color plots of CdS-0 (a), CdS-300 (b), CdS-500 (c), and CdS-700 (d) in acetonitrile. Corresponding spectral profiles of CdS-0 (e), CdS-300 (f), CdS-500 (g), and CdS-700 (h). Normalized GSB decay kinetic fitting curves of CdS-0 (i), CdS-300 (j), CdS-500 (k), and CdS-700 (l).

Fig. 4. (a) Pseudocolor fs-TA plots of CdS-0 with LA in acetonitrile (denoted as CdS-0-ACN-LA). (b) Normalized kinetic decay curve of CdS-0-ACN-LA. Excitation (c) and decay spectra (d) of CdS-0-ACN-LA.

Fig. 5. fs-TA pseudo-color plots of CdS-0 (a), CdS-300 (b), CdS-500 (c), and CdS-700 (d) in water. Corresponding spectral profiles of CdS-0 (e), CdS-300 (f), CdS-500 (g), and CdS-700 (h) in water. Normalized GSB decay kinetic fitting curves of CdS-0 (i), CdS-300 (j), CdS-500 (k), and CdS-700 (l) in water.

Fig. 6. (a) Pseudocolor fs-TA plots of CdS-0 with K2Cr2O7 in water (denoted as CdS-0-H2O-Cr). (b) Normalized kinetic decay curve of CdS-0-H2O-Cr. Excitation (c) and decay (d) spectra of CdS-0-H2O-Cr.

Fig. 7. (a) Pseudocolor fs-TA plots of CdS-0 with lactic acid in water (denoted as CdS-0-H2O-LA). (b) Normalized kinetic decay curve of CdS-0-H2O-LA. Excitation (c) and decay (d) spectra of CdS-0-H2O-LA.

Fig. 8. (a) Schematic illustration of electron transfer and recombination pathways in CdS. (b) SPV values of CdS samples calcined at different temperatures.

参考文献

[1]	F. Xu, L. Zheng, J. Zhang, Y. He, H. Cao, X. Zheng, H. García, J. Yu, Nat. Catal., 2026, 9, 73-86.
[2]	J. Kaur, S. C. Peter, Angew. Chem. Int. Ed., 2025, 64, e202418708.
[3]	D. D. Kruger, M. Cabrero-Antonino, S. Osella, F. Xu, J. Yu, A. Primo, H. García, Angew. Chem. Int. Ed., 2026, 65, e8425918.
[4]	W. Yu, Chin. J. Catal., 2025, 73, 8-11.
[5]	J. Qiu, C. Cheng, H. García, G. Liang, B. Zhu, L. Zhang, J. Yu, Angew. Chem. Int. Ed., 2025, 64, e202515898.
[6]	S. Zhang, C. Bie, Rare Met., 2025, 44, 9289-9292.
[7]	H. Yu, H. Liang, J. Bai, C. Li, Int. J. Hydrogen Energy, 2023, 48, 15908-15920.
[8]	H. Zhao, H. Fu, X. Yang, S. Xiong, D. Han, X. An, Int. J. Hydrogen Energy, 2022, 47, 8247-8260.
[9]	J. Cai, X. Li, B. Su, B. Guo, X. Lin, W. Xing, X.-F. Lu, S. Wang, J. Mater. Sci. Technol., 2025, 234, 82-89.
[10]	W. Fu, S. Wang, Y. Zhang, B. Cheng, Y. Wu, J. Mater. Sci. Technol., 2025, 232, 181-190.
[11]	M. Wei, C. Cheng, B. He, B. Cheng, K. Qi, C. Bie, Acta Phys.-Chim. Sin., 2025, 41, 100158.
[12]	J. Cai, C. Cheng, B. Liu, J. Zhang, C. Jiang, B. Cheng, Acta Phys.-Chim. Sin., 2025, 41, 100084.
[13]	F. Liu, X. Li, B. Sun, Y. He, T. Gao, G. Zhou, J. Mater. Sci. Technol., 2026, 250, 233-242.
[14]	A. H. Raza, S. Farhan, Z. Yu, Y. Wu, Acta Phys. Chim. Sin., 2024, 40, 2406020.
[15]	X. Xiang, B. Cheng, B. Zhu, C. Jiang, G. Liang, Chin. J. Catal., 2025, 68, 326-335.
[16]	K. Meng, J. Zhang, B. Zhu, C. Jiang, H. García, J. Yu, Adv. Mater., 2025, 37, 2505088.
[17]	H.-Q. Xu, S. Yang, X. Ma, J. Huang, H.-L. Jiang, ACS Catal., 2018, 8, 11615-11621.
[18]	M. Shi, G. Li, J. Li, X. Jin, X. Tao, B. Zeng, E. A. Pidko, R. Li, C. Li, Angew. Chem. Int. Ed., 2020, 59, 6590-6595.
[19]	S. Li, X. Wang, B. Xue, D. Feng, Y. Liu, W. Jiang, J. Mater. Sci. Technol., 2026, 246, 237-246.
[20]	F. Xu, Y. He, J. Zhang, G. Liang, C. Liu, J. Yu, Angew. Chem. Int. Ed., 2025, 64, e202414672.
[21]	M. Gu, Y. Yang, B. Cheng, L. Zhang, P. Xiao, T. Chen, Chin. J. Catal., 2024, 59, 185-194.
[22]	Y. Zhang, S. Wang, Chin. J. Catal., 2025, 71, 1-4.
[23]	P. Li, Y. Cui, Z. Wang, G. Dawson, C. Shao, K. Dai, Acta Phys. Chim. Sin., 2025, 41, 100065.
[24]	R.-B. Wei, Z.-L. Huang, G.-H. Gu, Z. Wang, L. Zeng, Y. Chen, Z.-Q. Liu, Appl. Catal. B, 2018, 231, 101-107.
[25]	X. Yin, D. Gao, J. Zhang, H. García, J. Yu, H. Yu, J. Am. Chem. Soc., 2025, 147, 34881-34890.
[26]	R. Wang, L. Shi, E. Y. Konysheva, X. Xu, Adv. Funct. Mater., 2025, 35, 2418074.
[27]	X.-J. Li, M.-Y. Qi, J.-Y. Li, C.-L. Tan, Z.-R. Tang, Y.-J. Xu, Chin. J. Catal., 2023, 51, 55-65.
[28]	J. Chen, Chin. J. Catal., 2025, 68, 213-222.
[29]	D. Gao, H. Yu, H. García, J. Yu, Prog. Mater Sci., 2026, 159, 101663.
[30]	P. Chen, Z. Zhu, Z. Liu, F. Liang, X. Zhu, Z. Bin, F. Huang, N. Wang, Y. Zhu, Chem. Eng. J., 2025, 506, 159689.
[31]	Y.-H. Wu, Y.-Q. Yan, Y.-X. Deng, W.-Y. Huang, K. Yang, K.-Q. Lu, Chin. J. Catal., 2025, 70, 333-340.
[32]	C. Yuan, W. Xia, J. Wang, X. Zhu, Y. Zhang, B. Zhu, J. Yu, Acta Phys.-Chim. Sin., 2026, 42, 100244.
[33]	A. Meng, X. Wu, Z. Lu, M. Gu, W. Zhong, Y. Su, J. Yu, Angew. Chem. Int. Ed., 2026, 65, e25871.
[34]	M. Sayed, L. Zhang, H. García, H. Yu, J. Yu, Acc. Chem. Res., 2026, 59, 1138-1153.
[35]	Z. Zhang, Y. Xia, C. Shao, L. Sun, G. Dawson, K. Dai, J. Mater. Sci. Technol., 2026, 252, 1-33.
[36]	X. Wu, M. Sayed, G. Wang, W. Yu, B. Zhu, Adv. Mater., 2026, 38, e11322.
[37]	Z. Liu, Y. Bian, G. Dawson, J. Zhu, K. Dai, Chin. Chem. Lett., 2025, 36, 111272.
[38]	J. Xiong, J. Di, J. Xia, W. Zhu, H. Li, Adv. Funct. Mater., 2018, 28, 1801983.
[39]	S. Bai, N. Zhang, C. Gao, Y. Xiong, Nano Energy, 2018, 53, 296-336.
[40]	N. Taki, K. Kawakatsu, M. Akita, Y. Uesaka, T. Jiang, S. Liu, S. Usuki, K. Nakata, Appl. Surf. Sci., 2026, 730, 166235.
[41]	C. Chen, Z. Wang, J. Zhang, K. Dai, J. Zhang, L. Zhang, Adv. Mater., 2026, 38, e73326.
[42]	J. Liu, X. Lu, Z. Liu, W. Xin, J. Li, C. Yang, Opt. Mater., 2026, 175, 118035.
[43]	L. Sabariselvan, A. Syed, J. P. Steffy, A. M. Elgorban, I. Abid, L. S. Wong, S. S. Khan, J. Water Process Eng., 2025, 69, 106761.
[44]	X. Zhou, Y. Zhong, R. Bai, W. Chen, J. Li, L. Lin, X. Tian, F. Zhao, Adv. Funct. Mater., 2026, 36, e19763.
[45]	C. Zhang, Z. Zheng, Z. Wang, F. Deng, X. Li, J. Zou, Chem. Eng. J., 2025, 504, 158286.
[46]	K. Feng, L. Qian, P. Zeng, C. Dai, C. Zeng, J. Photochem. Photobiol. A, 2026, 478, 117166.
[47]	S. Wang, H. Ren, L. Zeng, J. Lohwacharin, Y. Huang, C. Wang, J. Environ. Chem. Eng., 2025, 13, 119134.
[48]	M. Du, S. Yang, J. Zhang, D. A. Syrtsov, J. B. Ghasemi, M. V. Fedin, L. Zhang, J. Mater. Sci. Technol., 2026, 243, 245-255.
[49]	J. Yan, J. Zhang, J. Mater. Sci. Technol., 2024, 193, 18-21.
[50]	H. Yang, C. Ai, Y. Zhou, B. He, J. Zhang, J. Yu, Artif. Photosynth., 2026, 2, 53-66.
[51]	S. Yang, C. Bie, Y. Wu, W. Xia, K. Xu, J. Zhang, J. Yu, Small, 2026, 22, e72654.
[52]	X. Zhou, Y. Huo, S. Yang, B. He, X. Wang, Z. Wu, J. Zhang, Acta Phys.-Chim. Sin., 2025, 41, 100160.
[53]	L. Zhang, J. Zhang, J. Yu, H. García, Nat. Rev. Chem., 2025, 9, 328-342.
[54]	Y. Zhao, C. Yang, S. Zhang, G. Sun, B. Zhu, L. Wang, J. Zhang, Chin. J. Catal., 2024, 63, 258-269.
[55]	Y. Bian, Z. Wang, M. Du, K. Dai, J. Yu, L. Zhang, Adv. Funct. Mater., 2025, 36, e19493.
[56]	Z. Meng, J. Zhang, C. Jiang, C. Trapalis, L. Zhang, J. Yu, Small, 2024, 20, 2308952.
[57]	C. Bie, B. Zhu, F. Xu, L. Zhang, J. Yu, Adv. Mater., 2019, 31, 1902868.
[58]	Y. Wang, X. Xu, W. Lu, Y. Huo, L. Bian, Dalton Trans., 2018, 47, 4219-4227.
[59]	Y. Zhang, H. Huang, L. Wang, X. Zhang, Z. Zhu, J. Wang, W. Yu, Y. Zhang, Chem. Eng. J., 2023, 454, 140420.
[60]	Y. Zhang, M. Zhu, S. Zhang, Y. Cai, Z. Lv, M. Fang, X. Tan, X. Wang, Appl. Catal. B, 2020, 279, 119390.
[61]	Z. Wang, Y. Chen, L. Zhang, B. Cheng, J. Yu, J. Fan, J. Mater. Sci. Technol., 2020, 56, 143-150.
[62]	W. Yao, X. Song, C. Huang, Q. Xu, Q. Wu, Catal. Today, 2013, 199, 42-47.
[63]	X. Wang, Y. Zhang, H. Si, Q. Zhang, J. Wu, L. Gao, X. Wei, Y. Sun, Q. Liao, Z. Zhang, K. Ammarah, L. Gu, Z. Kang, Y. Zhang, J. Am. Chem. Soc., 2020, 142, 4298-4308.
[64]	C. Xu, X. Liu, Y. Zhang, F. Liao, S. Hu, A. Munnir, R. Su, F. Deng, J. Environ. Chem. Eng., 2025, 13, 115957.
[65]	R. K. Chava, N. Son, M. Kang, J. Alloys Compd., 2021, 873, 159797.
[66]	S. S. Khan, J. P. Steffy, S. Swetha, A. Syed, A. M. Elgorban, A. T. Alfagham, M. Verma, L. S. Wong, J. Water Process Eng., 2025, 69, 106619.
[67]	B. Liu, J. Cai, J. Zhang, H. Tan, B. Cheng, J. Xu, Chin. J. Catal., 2023, 51, 204-215.
[68]	H. Li, J. Zhang, X. Zhou, Z. Wu, L. Zhang, J. Mater. Sci. Technol., 2025, 231, 1-10.
[69]	Y. Huo, X. Zhou, F. Zhao, C. Ai, Z. Wu, Z. Chang, B. Zhu, Acta Phys. Chim. Sin., 2025, 41, 100148.
[70]	B. Liu, K. Meng, B. Cheng, L. Wang, G. Liang, C. Bie, J. Mater. Sci. Technol., 2025, 231, 286-295.
[71]	Z. Yang, S. Yang, H. Yang, J. Zhang, J. Yu, Small, 2025, 21, e08960.
[72]	Y. Yang, X. Zhou, M. Gu, B. Cheng, Z. Wu, J. Zhang, Acta Phys.-Chim. Sin., 2025, 41, 100064.
[73]	R. Chen, F. Fan, T. Dittrich, C. Li, Chem. Soc. Rev., 2018, 47, 8238-8262.
[74]	L. Yuan, C. Tang, P. Du, J. Li, C. Zhang, Y. Xi, Y. Bi, T. Bao, A. Du, C. Liu, C. Yu, Angew. Chem. Int. Ed., 2024, 63, e202412340.
[75]	D. C. Hurum, A. G. Agrios, K. A. Gray, T. Rajh, M. C. Thurnauer, J. Phys. Chem. B, 2003, 107, 4545-4549.

通过可控硫空位工程调控CdS中的载流子动力学: 飞秒瞬态吸收光谱的见解

Regulating carrier dynamics in CdS via controlled sulfur vacancy engineering: Insights from femtosecond transient absorption spectroscopy

RichHTML

PDF

Supporting Information

可视化

摘要/Abstract

引用本文

使用本文

扫码分享

图/表 8

参考文献

相关文章 15

编辑推荐

Metrics

[1]	孟爱云, 钟威, 谷苗莉, 吴小媛, 余维来, 苏耀荣. 硫化镉基制氢光催化剂的最新研究进展[J]. 催化学报, 2026, 86(7): 49-76.
[2]	赖可溱, 孙雨鑫, 李林萍, 施晓庆, 周小松, 李宁, 高旸钦, 戈磊. 缺陷介导的Zn-CuInS₂双位点协同催化: 轨道调控实现高效光催化CO₂转化制乙烯[J]. 催化学报, 2026, 85(6): 153-167.
[3]	张健, 干雅梅, 朱攀, 赵子涵, 陈修来. 光驱动一碳化合物生物转化实现节能生产化学品[J]. 催化学报, 2026, 83(4): 198-208.
[4]	龙浩宇, 吴新鹤, Dmitry Selishchev, Jahan B. Ghasemi, 余家国, 余火根. CdS基S型异质结光催化析氢研究进展[J]. 催化学报, 2026, 91(12): 50-67.
[5]	张晓, 王雨欣, 孙书涵, 熊贤强, 李覃, 吕康乐. 电荷-光热-催化协同提升ZnCdS/Co₂SnO₄光催化产氢与苯甲醇氧化性能[J]. 催化学报, 2026, 90(11): 184-196.
[6]	李访, 关晨, 余治晗, 向全军. 揭示非对称电荷提取机理[J]. 催化学报, 2026, 90(11): 298-308.
[7]	张莹, 范增源, 章小洪, 赵波, 王艺凝, 吴云鹏, Hiang Kwee Lee, 王佳伟. 三维碳泡沫与阴离子空位协同调控镍铁双金属硫化物用于高效碱性/海水电解析氢反应[J]. 催化学报, 2026, 89(10): 218-231.
[8]	刘欢, 秉琦明, 于良, 邓德会. 面向高效乙炔加氢制乙烯的二硫化钨限域金属原子催化剂理论预测[J]. 催化学报, 2025, 76(9): 221-229.
[9]	张云超, 潘劲康, 倪响, 莫非奇, 徐远国, 董鹏玉. 有机/无机杂化FS-COF/WO₃ S型异质结电荷载流子动力学及其光催化析氢性能[J]. 催化学报, 2025, 74(7): 250-263.
[10]	吴永辉, 鄢雨晴, 邓奕翔, 黄微雅, 杨凯, 卢康强. 合理构建S型CdS量子点/In₂O₃空心纳米管异质结以增强光催化产氢[J]. 催化学报, 2025, 70(3): 333-340.
[11]	李红芬, 张以河, 李建明, 刘青, 张晓俊, 张有鹏, 黄洪伟. 负载埃洛石纳米管和NiS助催化剂促进CdS光催化产H₂O₂性能[J]. 催化学报, 2025, 69(2): 111-122.
[12]	王珊, 程蓓, 戚克振. 利用开尔文探针力显微镜揭示S型异质结中的空间分辨电荷转移[J]. 催化学报, 2025, 78(11): 1-3.
[13]	毛思航, 赫荣安, 宋少青. S型异质结界面超快电子转移促进人工光合成[J]. 催化学报, 2024, 64(9): 1-3.
[14]	谢典科, 杨天仪, 马重阳, 董崇礼, 王双印, 邹雨芹. 硫空位促进硝基芳烃与芳基醛电化学还原偶联高选择性电合成亚胺[J]. 催化学报, 2024, 65(10): 206-216.
[15]	李锋, 唐小龙, 胡卓锋, 黎相明, 李方, 谢宇, 江燕斌, 余长林. 镓离子掺杂和硫空位调控的In₂S₃增强可见光下光催化生成过氧化氢[J]. 催化学报, 2023, 55(12): 253-264.