Highly efficient Z-scheme WO3-x quantum dots/TiO2 for photocatalytic hydrogen generation

doi:10.1016/S1872-2067(16)62576-7

Abstract

Abstract:

Z-scheme semiconductors are a promising class of photocatalysts for hydrogen generation. In this work, Z-scheme semiconductors composed of WO_3-x quantum dots supported on TiO₂ (WO_3-x QDs/TiO₂) were fabricated by solvothermal and hydrogen-reduction methods. Characterization by transmission electron microscopy and X-ray diffraction indicated that the amount and size of the WO_3-x QDs could be tuned by modulating the addition of the W precursor. Evidence from X-ray photoelectron spectroscopy and photoluminescence spectroscopy suggested that the hydrogen reduction of the composite induced the formation of oxygen vacancy (W⁵⁺/VO) defects in WO₃. These defects led to ohmic contact between WO_3-x and TiO₂, which altered the charge-transfer pathway from type II heterojunction to Z-scheme, and maintained the highly reductive and oxidative ability of TiO₂ and WO_3-x, respectively. Therefore, the Z-scheme sample showed 1.3-fold higher photoactivity than pure TiO₂ in hydrogen generation. These results suggest that the formation of W⁵⁺/VO defects at the interface is highly beneficial for the fabrication of Z-scheme photocatalysts.

Key words: WO_3-x, Titanium oxide, Hydrogen generation, Quantum dots, W⁵⁺/oxygen vacancy defect

Lun Pan, Jingwen Zhang, Xu Jia, Yu-Hang Ma, Xiangwen Zhang, Li Wang, Ji-Jun Zou. Highly efficient Z-scheme WO_3-x quantum dots/TiO₂ for photocatalytic hydrogen generation[J]. Chinese Journal of Catalysis, 2017, 38(2): 253-259.

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Highly efficient Z-scheme WO_3-x quantum dots/TiO₂ for photocatalytic hydrogen generation

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