Benefiting from Fermi level equilibration, interfacial band bending, and built-in electric fields, S-scheme heterostructures achieve efficient interfacial charge separation while preserving the robust redox capability of photogenerated charge carriers. This review systematically clarifies the evolutionary logic of heterojunction charge transfer models, spanning from conventional type-II and diverse Z-scheme configurations to advanced S-scheme heterostructures, and elaborates the core interfacial semiconductor physics governing S-scheme systems. A comprehensive overview is provided on the experimental characterization and theoretical verification techniques for identifying S-scheme charge transfer pathways, including density functional theory simulations, Kelvin probe force microscopy, in-situ X-ray photoelectron spectroscopy, femtosecond transient absorption spectroscopy, and electron paramagnetic resonance. On this basis, the unique superiority of graphitic carbon nitride (g-C3N4) as a reduction photocatalyst (RP) in S-scheme systems is thoroughly analyzed from the perspectives of thermodynamic band structure, interfacial charge redistribution, layered structural compatibility, and flexible surface modification. Furthermore, this paper summarizes the state-of-the-art advances of g-C3N4-based S-scheme photocatalysts for typical catalytic reactions, including photocatalytic H2 evolution, H2O2 production, photoreductive CO2 conversion, bacterial disinfection, and organic pollutant degradation. Corresponding reaction-oriented structural optimization strategies are also categorized and discussed, involving dimensional matching engineering, active site regulation, homojunction construction, and bifunctional redox coupling design. Finally, the key bottlenecks that restrict the practical application of g-C3N4-based S-scheme photocatalysts are highlighted.